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| 100 | _a19950130h19941994k y0frey50 ba | ||
| 101 | 0 |
_aeng _2639-2 |
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| 102 | _aUS | ||
| 105 | _aa za 001yy | ||
| 106 | _ar | ||
| 181 |
_6z01 _ctxt _2rdacontent |
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_6z01 _cn _2rdamedia |
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_6z01 _an |
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| 200 | 1 |
_aVLSI fabrication principles _esilicon and gallium arsenide _fSorab K. Ghandhi,... |
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| 205 | _a2nd edition | ||
| 210 |
_aNew York [etc.] _cJ. Wiley & sons _dcop. 1994 |
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| 215 |
_a1 vol. (xi-834 p.) _cill. _d23 cm |
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| 320 | _aBibliogr. en fin de chapitres. Index | ||
| 517 | _aVery large scale integration fabrication principles | ||
| 606 |
_3029487684 _aSemiconducteurs à l'arséniure de gallium _2rameau |
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| 606 |
_3027895823 _aCircuits intégrés à très grande échelle _2rameau |
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| 606 |
_3028117956 _aSilicones _2rameau |
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| 606 |
_3033946426 _aArséniure de gallium _2rameau |
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| 606 |
_aSilicon _2lc |
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| 606 |
_aGallium arsenide _2lc |
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| 606 |
_aIntegrated circuits _xVery large scale integration _2lc |
||
| 675 | _a621.3.049 | ||
| 676 |
_a621.3815/2 _v20 |
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| 680 |
_aTK7874 _b.G473 1994 |
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| 700 | 1 |
_3136660835 _aGhandhi _bSorab Khushro _f1928-.... _4070 |
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