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009			258392509
003			http://www.sudoc.fr/258392509
005			20250630092513.0
010			_a9780367783037 _bbr.
010			_a978-1-4987-0417-5 _brel.
010			_a0-367-78303-7
073		0	_a9780367783037
090			_a15258
099			_tOUVR _zALEX30343
100			_a20211110d2016 u y0gery50 ba
101	0		_aeng _2639-2
102			_aUS
105			_ay ||||000|y
181			_6z01 _ctxt _2rdacontent
181		1	_6z01 _ai# _bxxxe##
182			_6z01 _cn _2rdamedia
182		1	_6z01 _an
183		1	_6z01 _anga _2RDAfrCarrier
200	1		_a2D materials for nanoelectronics _fedited by Michel Houssa,... Athanasios Dimoulas,... Alessandro Molle,...
214		0	_aBoca Raton _aLondon _aNew York _cCRC Press, Taylor & Francis Group
214		4	_dC 2016
215			_a1 vol. (XVI-467 p.) _cIll. _d24 cm
225	0		_aSeries in materials science and engineering
305			_aEdition brochée en 2020
320			_aBibliogr. en fin de chapitres; Index
327	0		_aTheory of the structural, electronic and transport properties of graphene / Massoud Ramezani Masir, Ortwin Leenaerts, Bart Partoens, and François Peeters _aEpitaxial graphene: progress on synthesis and device integration / Joshua Robinson, Matthew Hollander, and Suman Datta _aMetal contacts to graphene / Akira Toriumi and Kosuke Nagashio _aGraphene for RF analog applications / Max Lemme and Frank Schwierz _aHigh-field and thermal transport in graphene / Zuanyi Li, Vincent Dorgan, Andrey Serov, and Eric Pop _aTheoretical study of transition metal dichalcogenides / Emilio Scalise _aPhysico-chemical characterization of MoS2/metal and MoS2/oxide interfaces / Stephen McDonnell, Rafik Addou, Christopher Hinkle, and Robert Wallace _aTransition metal dichalcogenide Schottky barrier transistors: a device analysis and material comparison / Joerg Appenzeller, Feng Zhang, Saptarshi Das, and Joachim Knoch _aTMD-based photodetectors, light emitters and photovoltaics / Thomas Mueller _aOptoelectronics, mechanical properties and strain engineering in MoS2 / Andres Castellanos-Gomez, Michele Buscema, Herre S.J. van der Zant, and Gary A. Steele _aDevice physics and device mechanics for flexible TMD and phosphorene thin film transistors / Hsiao-Yu Chang, Weinan Zhu, and Deji Akinwande _aStructural, electronic and transport properties of silicene and germanene / Michel Houssa, Valery Afanas'ev, and André Stesmans _aGroup IV semiconductor 2D materials: the case of silicene and germanene / Alessandro Molle, Dimitra Tsoutsou, and Athanasios Dimoulas _aStannene: a likely 2D topological insulator / William Vandenberghe, Ana Suarez Negreira, and Massimo Fischetti _aPhosphorene: a novel 2D material for future nanoelectronics and optoelectronics / Yexin Deng, Wei Luo, Han Liu, Yuchen Du, Kun Xu, and Peide Ye _a2D-crystal based heterostructures for nanoelectronics / Cinzia Casiraghi and Freddie Withers
330			_a"Major developments in the semiconductor industry are on the horizon through the use of 2D materials such as graphene and transition metal dichalcogenides for integrated circuits. This book provides the first comprehensive treatment of the field with an emphasis on applications in nanoelectronic devices. Chapters are divided by the three major families of such materials, covering graphene for analog and photonic applications, MoS2 (molybdenum disulfide) for logic applications and novel materials such as silicene, germanene, stanene and phosphorene
410			_0145461246 _tSeries in materials science and engineering (Online) _x2155-2282
517			_aTwo D materials for nanoelectronics
517			_aTwo-dimensional materials for nanoelectronics
606			_aNanostructured materials _2lc
606			_aGraphene _2lc
606			_aNanoelectronics _2lc
606			_aNanoelektronik _2lc
606			_3136991629 _aNanoélectronique _2rameau
606			_3125142455 _aGraphène _2rameau
606			_3033882118 _aMatériaux nanostructurés _2rameau
702		1	_3086189433 _aHoussa _bMichel _4340
702		1	_3191234192 _aDimoulas _bAthanasios _f19..-.... _4340
702		1	_3258392533 _aMolle _bAlessandro _4340