000 00544nam a22001577a 4500
001 16605
010 _a9780735422704
010 _a978-0-7354-2269-8
_EPUBb
090 _a16605
099 _tOUVR
_zALEX32901
100 _a20241101d2021 m||y0frey50 ba
200 _aCharacterization of Defects and Deep Levels for GaN Power Devices
214 _aNew-York
_cAIP Publishing
_d2021
215 _a224 pp.
700 _aTETSUO
_bNarita
_4070
856 _uhttps://aip.scitation.org/doi/book/10.1063/9780735422698
_zLivre électronique