000 00767nam a22001457a 4500
001 4665
090 _a4665
099 _tOUVR
_zALEX16867
100 _a20241101d1961 m||y0engy50 ba
101 _aeng
105 _a||||||||1||||
200 _aProceedings of the international conference on semiconductor physics
214 _aNew York
_aPrague
_cAcademic press
_cPublishing House of the Czechoslovak Academy of Sciences (Institution)
_d1961
215 _a1133pp.
_d24 cm
300 _aJ. Backovsky, J. Bardeen, P. T. Landsberg, P.J. Price, A. R. Regel, B. M. Vul, P. Aigrain, W. L. Brown, D. L. Dexter, L. Sosnowski, L. R. Apker, T. S. Moss, W. H. Brattain, A. V. Rzanov, K. B. Tolpygo, H. P. R. Frederikse, M. Schön, R. Kaisev, R. Rompe, Z. Trousil, G. Busch