000 | 00767nam a22001457a 4500 | ||
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001 | 4665 | ||
090 | _a4665 | ||
099 |
_tOUVR _zALEX16867 |
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100 | _a20241101d1961 m||y0engy50 ba | ||
101 | _aeng | ||
105 | _a||||||||1|||| | ||
200 | _aProceedings of the international conference on semiconductor physics | ||
214 |
_aNew York _aPrague _cAcademic press _cPublishing House of the Czechoslovak Academy of Sciences (Institution) _d1961 |
||
215 |
_a1133pp. _d24 cm |
||
300 | _aJ. Backovsky, J. Bardeen, P. T. Landsberg, P.J. Price, A. R. Regel, B. M. Vul, P. Aigrain, W. L. Brown, D. L. Dexter, L. Sosnowski, L. R. Apker, T. S. Moss, W. H. Brattain, A. V. Rzanov, K. B. Tolpygo, H. P. R. Frederikse, M. Schön, R. Kaisev, R. Rompe, Z. Trousil, G. Busch |