000			02070cam0a2200457 4500
001			7297
009			149302681
003			http://www.sudoc.fr/149302681
005			20250630091744.0
010			_a0863413528 _bhbk.
010			_a978-0-86341-352-0 _bhbk.
020			_aUS _b2006286573
020			_aGB _bA473566
090			_a7297
099			_tOUVR _zALEX19580
100			_a20110118d2004 k y0frey50 ba
101	0		_aeng _2639-2
102			_aGB
105			_aa a 001yy
106			_ar
181			_6z01 _ctxt _2rdacontent
181		1	_6z01 _ai# _bxxxe##
182			_6z01 _cn _2rdamedia
182		1	_6z01 _an
200	0		_aSilicide technology for integrated circuits _fedited by Lih J. Chen
210			_aLondon _cInstitution of Electrical Engineers _dcop.2004
215			_a1 vol. (xviii, 279 p.) _cill. _d26 cm
225	0		_aProcessing series _vNo. 5
320			_aRéférences bibliogr. Index
327	1		_a1. Silicides _aan introduction / J.W. Mayer and S.S. Lau _a2. Silicide formation / L.J. Chen _a3. Titanium silicide technology / Z. Ma and L.H. Allen _a4. Cobalt silicide technology / T. Kikkawa, K. Inoue and K. Imai _a5. Nickel silicide technology / C. Lavoie, C. Detavernier and P. Besser _a6. Light-emitting iron disilicide / L.J. Chou _a7. Silicide contacts for Si/Ge devices / J.E. Burnette, M. Himmerlich and R.J. Nemanich _a8. Silicide technology for SOI devices / L.P. Ren and K.N. Tu _a9. Characterisation of metal silicides / Y.F. Hsieh, S.L. Cheng and L.J. Chen
410			_tprocessing series _vNo.5
452			_tSilicide technology for integrated circuits. _cLondon : Institution of Electrical Engineers, c2004
606			_aSilicides _2lc
606			_aIntegrated circuits _xMaterials _2lc
606			_3027223221 _aCircuits intégrés _2rameau
606			_3027806839 _aSilicium _2rameau
676			_a621.3815 _v22
680			_aTK7871.15.S55 _bS52 2004
680			_aQD181.S6 _bS4413 2004
702		1	_3149302355 _aChen _bLih J. _4340
710	0	2	_3031638244 _aInstitution of Electrical Engineers _cLondres _c1871-2006 _4070